Part Image

BSC072N08NS5 - Infineon

Description: Infineon DIFFERENTIATED MOSFETS

Download BSC072N08NS5 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSC072N08NS5 - Infineon PCB footprint - Other - Other - PG-TDSON-8_2
click to zoom
3D Models
BSC072N08NS5 - Infineon  - 3D model - Other - PG-TDSON-8_2
click to zoom

BSC072N08NS5 Details

  • Manufacturer Part Number:

    BSC072N08NS5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    296 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC072N08NS5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC072N08NS5 is -55°C to 175°C.
  • To ensure proper cooling, use a heat sink with a thermal resistance of ≤ 1 K/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/mK. Additionally, ensure good airflow around the device.
  • The recommended gate drive voltage for the BSC072N08NS5 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
  • To protect the BSC072N08NS5 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or leads.
  • The maximum allowed drain-source voltage (Vds) for the BSC072N08NS5 is 80 V.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSC072N08NS5 Overview

Use the download button to access the BSC072N08NS5 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC07, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSC072N08NS5

Showing 0 results