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BSC0902NSATMA1 - Infineon

Description: MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

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PCB Footprints
BSC0902NSATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8_2020
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3D Models
BSC0902NSATMA1 - Infineon  - 3D model - Other - PG-TDSON-8_2020
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BSC0902NSATMA1 Details

  • Manufacturer Part Number:

    BSC0902NSATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC0902NSATMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Use a shielded enclosure, keep the device away from high-frequency sources, and use a common-mode choke or ferrite bead to filter out electromagnetic interference (EMI).
  • The maximum allowed voltage on the input pins is 5.5V, but it's recommended to keep it below 5V to ensure reliable operation and prevent damage to the device.
  • The POR and BOD features are enabled by default. To disable them, tie the POR/BOD pin to VCC. For custom POR/BOD settings, use external resistors and capacitors according to the datasheet.
  • The recommended operating temperature range is -40°C to 125°C. However, the device can operate up to 150°C with reduced performance and lifespan.

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BSC0902NSATMA1 Overview

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Part Image BSC0902NS Infineon Technologies AG

Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET