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BSC0906NS - Infineon

Description: MOSFETs N-Ch 30V 63A TDSON-8 OptiMOS

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Symbol
BSC0906NS - Infineon - PCB symbol
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PCB Footprints
BSC0906NS - Infineon PCB footprint - Other - Other - PG-TDSON-8-6
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3D Models
BSC0906NS - Infineon - 3D model - Other - PG-TDSON-8-6
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BSC0906NS Details

  • Manufacturer Part Number:

    BSC0906NS

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    14 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.0064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    252 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC0906NS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper biasing of the gate driver (VCC) to ensure optimal performance. A decoupling capacitor (e.g., 100nF) should be placed close to the VIN pin, and a separate power supply or a voltage regulator should be used for VCC.
  • The maximum allowed parasitic inductance in the drain-source loop is approximately 5nH. Exceeding this value may lead to ringing and oscillations, affecting the device's performance and reliability.
  • A transient voltage suppressor (TVS) or a zener diode can be used to protect the device from overvoltage conditions. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • A gate resistance (RG) of 10-20 ohms is recommended for optimal switching performance. A lower RG can lead to faster switching times, but may also increase power losses.

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BSC0906NS Overview

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