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BSC0909NS - Infineon

Description: MOSFET N-Ch 30V 44A TDSON-8 OptiMOS

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PCB Footprints
BSC0909NS - Infineon PCB footprint - Other - Other - PG-TDSON-8-5
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3D Models
BSC0909NS - Infineon  - 3D model - Other - PG-TDSON-8-5
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BSC0909NS Details

  • Manufacturer Part Number:

    BSC0909NS

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27 W

  • Pulsed Drain Current-Max (IDM):

    176 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC0909NS Frequently Asked Questions (FAQs)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's current rating at high temperatures.
  • The maximum allowed voltage on the gate pin is 20V, but it's recommended to keep it below 15V to ensure reliable operation.
  • Yes, the BSC0909NS is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper layout and decoupling to minimize EMI and ringing.
  • Use a TVS diode or a zener diode for overvoltage protection, and consider adding a current sense resistor and a fuse for overcurrent protection.

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BSC0909NS Overview

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Part Image BSC0909NSATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET