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BSC090N03LSGATMA1 - Infineon

Description: MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3

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BSC090N03LSGATMA1 - Infineon - PCB symbol
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BSC090N03LSGATMA1 - Infineon PCB footprint - Other - Other - BSC090N03LSGATMA1-2
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BSC090N03LSGATMA1 - Infineon - 3D model - Other - BSC090N03LSGATMA1-2
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BSC090N03LSGATMA1 Details

  • Manufacturer Part Number:

    BSC090N03LSGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TDSON-8

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0133 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    192 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC090N03LSGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC090N03LSGATMA1 is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the device is properly decoupled and that the PCB layout is optimized for minimal parasitic inductance and capacitance.
  • To minimize parasitic inductance and capacitance, use a multi-layer PCB with a solid ground plane, and keep the device as close to the power source as possible. Also, use short and wide traces for the power connections, and avoid using vias under the device.
  • To ensure proper thermal management, use a heat sink with a thermal interface material (TIM) and ensure good airflow around the device. The recommended thermal resistance (RthJA) for this device is 40 K/W.
  • The BSC090N03LSGATMA1 has an integrated ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage to the device.

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BSC090N03LSGATMA1 Overview

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