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BSC0925ND - Infineon

Description: MOSFETs N-Ch 30V 40A TISON-8

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PCB Footprints
BSC0925ND - Infineon PCB footprint - Other - Other - PG-TISON_25
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BSC0925ND - Infineon  - 3D model - Other - PG-TISON_25
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BSC0925ND Details

  • Manufacturer Part Number:

    BSC0925ND

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    14 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC0925ND Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • When selecting a gate driver for the BSC0925ND, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using a gate driver with a output current of at least 2A and a voltage rating of 5V or higher. Additionally, ensure the driver's rise/fall times are compatible with the MOSFET's switching frequency.
  • Although the datasheet specifies a maximum Vgs of ±20V, it's recommended to limit the gate-source voltage to ±15V to ensure reliable operation and prevent damage to the MOSFET.
  • The internal diode of the BSC0925ND can cause voltage spikes during switching. To mitigate this, use a snubber circuit or a diode in parallel with the MOSFET to clamp the voltage and reduce electromagnetic interference (EMI).
  • While the datasheet specifies an operating temperature range of -55°C to 175°C, it's recommended to operate the BSC0925ND within a range of -40°C to 150°C for optimal performance and reliability.

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