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BSC093N04LSG - Infineon

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BSC093N04LSG - Infineon PCB footprint - Other - Other - PG-TDSON-8-5_1
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BSC093N04LSG - Infineon  - 3D model - Other - PG-TDSON-8-5_1
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BSC093N04LSG Details

  • Manufacturer Part Number:

    BSC093N04LSG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SON

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0093 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    196 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC093N04LSG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC093N04LSG is -40°C to 150°C.
  • The recommended PCB layout for the BSC093N04LSG is to use a thermal pad with a minimum size of 10mm x 10mm, and to ensure good thermal conductivity by using a thick copper layer and thermal vias.
  • To ensure proper cooling, ensure good airflow around the device, use a heat sink with a thermal interface material, and consider using a fan or other cooling system if necessary.
  • The maximum current rating for the BSC093N04LSG is 93A, but this can be limited by the application's thermal design and the device's junction temperature.
  • Yes, the BSC093N04LSG is suitable for high-reliability applications, but it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specifications.

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BSC093N04LSG Overview

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Part Image BSC093N04LSGATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET