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BSC093N04LSGATMA1 - Infineon

Description: INFINEON - BSC093N04LSGATMA1 - MOSFET, N CH, 49A, 40V, PG-TDSON-8

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BSC093N04LSGATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-5 |  SuperSO8 5x6
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BSC093N04LSGATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-5 |  SuperSO8 5x6
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BSC093N04LSGATMA1 Details

  • Manufacturer Part Number:

    BSC093N04LSGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SON

  • Package Description:

    GREEN, PLASTIC, MO-240, TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0093 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    196 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC093N04LSGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for BSC093N04LSGATMA1 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the specified range of 30V to 40V.
  • For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The MOSFET should be placed near a thermal via to dissipate heat efficiently.
  • To protect the MOSFET from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage.
  • The maximum current rating for BSC093N04LSGATMA1 is 93A, but it is recommended to derate the current based on the operating temperature and other application-specific factors.

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BSC093N04LSGATMA1 Overview

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Part Image BSC093N04LSG Infineon Technologies AG

Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET