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BSC110N06NS3G - Infineon

Description: N-channel MOSFET Transistor, 50 A, 60 V, 8-Pin TDSON

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PCB Footprints
BSC110N06NS3G - Infineon PCB footprint - Other - Other - PG-TDSON-8_2022-2
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3D Models
BSC110N06NS3G - Infineon  - 3D model - Other - PG-TDSON-8_2022-2
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BSC110N06NS3G Details

  • Manufacturer Part Number:

    BSC110N06NS3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    22 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC110N06NS3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC110N06NS3G is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the gate-source voltage (VGS) and drain-source voltage (VDS) ratings. Additionally, ensure the device is operated within the recommended current limits and that the PCB layout is designed to minimize parasitic inductance and resistance.
  • The recommended gate resistor value for the BSC110N06NS3G depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 1 ohm and 10 ohms is suitable for most applications. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • To protect the BSC110N06NS3G from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes, in the circuit design.
  • The maximum allowable power dissipation for the BSC110N06NS3G is dependent on the operating conditions, including the ambient temperature, case temperature, and thermal resistance. Refer to the datasheet for the specific power dissipation ratings and thermal characteristics, and ensure that the device is operated within the recommended limits to prevent overheating and damage.

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