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BSC120N03LSGATMA1 - Infineon

Description: MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3

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BSC120N03LSGATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-5_1
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BSC120N03LSGATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-5_1
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BSC120N03LSGATMA1 Details

  • Manufacturer Part Number:

    BSC120N03LSGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    156 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC120N03LSGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC120N03LSGATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate-source voltage (Vgs) is within the recommended range (typically 4.5V to 10V), and use a gate driver with a low output impedance to reduce ringing and overshoot.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the driver IC. Avoid using vias under the MOSFET, and use a solid ground plane to reduce inductance.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended gate resistor value depends on the specific application and driver IC used. A typical value is around 10-20 ohms, but consult the driver IC datasheet and application notes for specific recommendations.

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