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BSC120N03MSGATMA1 - Infineon

Description: N-Channel 30 V 11A (Ta), 39A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-5

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BSC120N03MSGATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-5
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BSC120N03MSGATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-5
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BSC120N03MSGATMA1 Details

  • Manufacturer Part Number:

    BSC120N03MSGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    156 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC120N03MSGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC120N03MSGATMA1 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the specified range of 30V.
  • A good PCB layout should include a solid ground plane, short and wide traces for the drain and source pins, and a thermal pad for heat dissipation. A heat sink or thermal interface material can also be used to improve thermal management.
  • To protect the MOSFET from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
  • The maximum current rating for the BSC120N03MSGATMA1 is 120A, but this can be affected by the operating temperature and PCB design.

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BSC120N03MSGATMA1 Overview

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Part Image BSC120N03MSG Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET