Part Image

BSC150N03LDGATMA1 - Infineon

Description: Mosfet Array 2 N-Channel (Dual) 30V 8A 26W Surface Mount PG-TDSON-8-4

Download BSC150N03LDGATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
BSC150N03LDGATMA1 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

BSC150N03LDGATMA1 Details

  • Manufacturer Part Number:

    BSC150N03LDGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC150N03LDGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for BSC150N03LDGATMA1 is -55°C to 175°C.
  • To ensure optimal performance, the MOSFET should be biased with a gate-source voltage (Vgs) between 4.5V and 10V, and a drain-source voltage (Vds) within the recommended operating range.
  • For optimal thermal performance, it is recommended to use a PCB layout with a large copper area for heat dissipation, and to use thermal vias to connect the MOSFET to a heat sink or thermal pad.
  • To protect the MOSFET from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-protected packaging and storage.
  • The maximum current rating for BSC150N03LDGATMA1 is 150A, but this can be affected by the operating temperature and other factors, so it's recommended to check the datasheet for specific current ratings at different temperatures.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

BSC150N03LDGATMA1 Overview

Use the download button to access the BSC150N03LDGATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC15, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSC150N03LDGATMA1

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

BSC150N03LDGATMA1 Alternates

Showing results

Image Part Number Model
Part Image BSC150N03LDG Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET