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BSC160N10NS3GATMA1 - Infineon

Description: BSC160N10NS3GATMA1 N-Channel MOSFET, 42 A, 100 V OptiMOS 3, 8-Pin TDSON Infineon

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PCB Footprints
BSC160N10NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8_1
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3D Models
BSC160N10NS3GATMA1 - Infineon  - 3D model - Other - PG-TDSON-8_1
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BSC160N10NS3GATMA1 Details

  • Manufacturer Part Number:

    BSC160N10NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    8.8 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    168 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC160N10NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC160N10NS3GATMA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The maximum current rating of the BSC160N10NS3GATMA1 is 160A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the BSC160N10NS3GATMA1 from overvoltage and overcurrent, a suitable voltage regulator and current limiter should be used. Additionally, a fuse or circuit breaker can be used to protect the device from excessive current.
  • The recommended gate drive voltage for the BSC160N10NS3GATMA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance.

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Part Image BSC160N10NS3G Infineon Technologies AG

Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET