Part Image

BSC160N15NS5ATMA1 - Infineon

Description: INFINEON - BSC160N15NS5ATMA1 - MOSFET, N-CH, 150V, 56A, TDSON-8

Download BSC160N15NS5ATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSC160N15NS5ATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-5
click to zoom
3D Models
BSC160N15NS5ATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-5
click to zoom

BSC160N15NS5ATMA1 Details

  • Manufacturer Part Number:

    BSC160N15NS5ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    224 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC160N15NS5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC160N15NS5ATMA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via structure to dissipate heat efficiently.
  • The maximum current rating of the BSC160N15NS5ATMA1 is 160A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the BSC160N15NS5ATMA1 from overvoltage and overcurrent, a suitable voltage clamp and current sense resistor should be used. Additionally, a fuse or a circuit breaker can be used to protect the device from excessive current.
  • The recommended gate drive voltage for the BSC160N15NS5ATMA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can reduce the device's on-state resistance, but may also increase the risk of gate oxide damage.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSC160N15NS5ATMA1 Overview

Use the download button to access the BSC160N15NS5ATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSC16, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSC160N15NS5ATMA1

Showing 0 results

BSC160N15NS5ATMA1 Alternates

Showing results

Image Part Number Model
Part Image BSC190N15NS3GATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET