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BSC265N10LSFGATMA1 - Infineon

Description: BSC265N10LSFGATMA1 N-Channel MOSFET, 40 A, 100 V OptiMOS 2, 8-Pin PG-TDSON Infineon

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BSC265N10LSFGATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8_1
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BSC265N10LSFGATMA1 - Infineon  - 3D model - Other - PG-TDSON-8_1
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BSC265N10LSFGATMA1 Details

  • Manufacturer Part Number:

    BSC265N10LSFGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    GREEN, PLASTIC, TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    68 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.0265 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC265N10LSFGATMA1 Frequently Asked Questions (FAQs)

  • The BSC265N10LSFGATMA1 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and consider using a voltage regulator to maintain a stable voltage supply.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and consider using thermal vias and heat sinks to dissipate heat. Follow the recommended PCB layout guidelines in the datasheet.
  • To prevent electrostatic discharge (ESD) damage, handle the device with ESD-protective equipment, and consider using ESD protection diodes or other protection circuits in your design.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid bending or flexing the leads.

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BSC265N10LSFGATMA1 Overview

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Part Image BSC265N10LSFG Infineon Technologies AG

Power Field-Effect Transistor, 6.5A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET