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BSC320N20NS3GATMA1 - Infineon

Description: INFINEON - BSC320N20NS3GATMA1 - MOSFET, N CH, 200V, 36A, TDSON-8

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BSC320N20NS3GATMA1 - Infineon - PCB symbol
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PCB Footprints
BSC320N20NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8
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BSC320N20NS3GATMA1 - Infineon - 3D model - Other - PG-TDSON-8
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BSC320N20NS3GATMA1 Details

  • Manufacturer Part Number:

    BSC320N20NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    144 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC320N20NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC320N20NS3GATMA1 is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The maximum allowable power dissipation for the BSC320N20NS3GATMA1 is dependent on the thermal resistance and the maximum junction temperature. Refer to the datasheet for the specific thermal resistance values and calculate the maximum power dissipation accordingly.

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BSC320N20NS3GATMA1 Overview

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