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BSC340N08NS3GATMA1 - Infineon

Description: MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3

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BSC340N08NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-5 |  SuperSO8 5x6
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BSC340N08NS3GATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-5 |  SuperSO8 5x6
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BSC340N08NS3GATMA1 Details

  • Manufacturer Part Number:

    BSC340N08NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32 W

  • Pulsed Drain Current-Max (IDM):

    92 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC340N08NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC340N08NS3GATMA1 is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The maximum allowed drain-source voltage (Vds) for the BSC340N08NS3GATMA1 is 80V.

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BSC340N08NS3GATMA1 Overview

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Part Image BSC340N08NS3G Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET