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BSC360N15NS3GATMA1 - Infineon

Description: MOSFET N-Channel 150V 33A OptiMOS TDSON8

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PCB Footprints
BSC360N15NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8
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3D Models
BSC360N15NS3GATMA1 - Infineon  - 3D model - Other - PG-TDSON-8
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BSC360N15NS3GATMA1 Details

  • Manufacturer Part Number:

    BSC360N15NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC360N15NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC360N15NS3GATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for the BSC360N15NS3GATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the BSC360N15NS3GATMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and that the IGBTs are matched in terms of their electrical characteristics.
  • The maximum allowable voltage transient for the BSC360N15NS3GATMA1 is 1.5 times the maximum rated voltage, but it's recommended to limit voltage transients to 1.2 times the maximum rated voltage to ensure reliable operation.

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BSC360N15NS3GATMA1 Overview

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