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BSC600N25NS3GATMA1 - Infineon

Description: MOSFET N-Ch 250V 25A OptiMOS TDSON8 EP

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PCB Footprints
BSC600N25NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8
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BSC600N25NS3GATMA1 - Infineon  - 3D model - Other - PG-TDSON-8
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BSC600N25NS3GATMA1 Details

  • Manufacturer Part Number:

    BSC600N25NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC600N25NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC600N25NS3GATMA1 is 175°C, as specified in the datasheet.
  • To ensure the safe operating area (SOA) of the BSC600N25NS3GATMA1, you should follow the guidelines outlined in the datasheet, including limiting the drain-source voltage, drain current, and power dissipation within the recommended specifications.
  • The recommended gate drive voltage for the BSC600N25NS3GATMA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and requirements.
  • To minimize the switching losses of the BSC600N25NS3GATMA1, you can use a gate driver with a high current capability, optimize the gate resistance, and ensure a low inductance layout. Additionally, using a snubber circuit or a gate-source resistor can help reduce switching losses.
  • Yes, the BSC600N25NS3GATMA1 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, the maximum switching frequency depends on the specific application and requirements.

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