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BSC670N25NSFDATMA1 - Infineon

Description: N-Channel 250 V 24A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-1

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BSC670N25NSFDATMA1 Details

  • Manufacturer Part Number:

    BSC670N25NSFDATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TDSON-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    69 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC670N25NSFDATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC670N25NSFDATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the BSC670N25NSFDATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the BSC670N25NSFDATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

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Part Image BSC670N25NSFD Infineon Technologies AG

Power Field-Effect Transistor, 24A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET