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BSDL10S65E6 - Bourns

Description: 650V 10A Low Vf SiC schottky diode in DFN8x8

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BSDL10S65E6 - Bourns PCB footprint - Other - Other - BSDL10S65E6
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BSDL10S65E6 - Bourns  - 3D model - Other - BSDL10S65E6
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BSDL10S65E6 Details

  • Manufacturer Part Number:

    BSDL10S65E6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Bourns Inc

  • YTEOL:

    7

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.45 V

  • JESD-30 Code:

    S-PSSO-N4

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, EMBOSSED, 13 INCH

  • Power Dissipation-Max:

    157.8 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    50 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

BSDL10S65E6 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal performance of the BSDL10S65E6 includes using a solid ground plane, keeping the input and output traces separate, and minimizing the length of the input and output leads. Additionally, it is recommended to use a low-ESR capacitor for the output filter and to place it as close to the device as possible.
  • To ensure the reliability of the BSDL10S65E6 in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, use a heat sink if necessary, and ensure good airflow around the device. Additionally, it is recommended to use a thermally conductive interface material between the device and the heat sink.
  • The maximum allowed voltage transient for the BSDL10S65E6 is 80 V for a duration of less than 100 ns. Voltage transients exceeding this limit can cause damage to the device.
  • Yes, the BSDL10S65E6 can be used in a parallel configuration to increase the current handling capability. However, it is recommended to ensure that the devices are matched in terms of their electrical characteristics and that the layout is designed to minimize any differences in the current sharing between the devices.
  • The recommended storage condition for the BSDL10S65E6 is in a dry, cool place with a temperature range of -40°C to 125°C and a relative humidity of less than 80%. The devices should be stored in their original packaging or in a similar anti-static package to prevent damage from electrostatic discharge.

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BSDL10S65E6 Overview

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