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BSG0811ND - Infineon

Description: Dual N-CH 25V 50A 3/0,8mOhm

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BSG0811ND - Infineon PCB footprint - Other - Other - BSG0811ND-1
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BSG0811ND - Infineon  - 3D model - Other - BSG0811ND-1
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BSG0811ND Details

  • Manufacturer Part Number:

    BSG0811ND

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSG0811ND Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • The device requires a stable voltage supply of 12V ± 10% and a bias current of 10mA to 50mA. Ensure the voltage regulator is capable of providing a low noise and ripple-free output.
  • The maximum power dissipation of the BSG0811ND is 1.5W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended operating range.
  • Handle the device by the body or use an ESD wrist strap or mat to prevent ESD damage. Ensure the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.
  • Store the device in a dry, cool place away from direct sunlight. Handle the device by the body or use an ESD wrist strap or mat. Avoid bending or flexing the leads, and ensure the device is properly packaged to prevent mechanical damage.

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