SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
80 A
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-XUFM-X8
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
160 A
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
BSM080D12P2C008 Frequently Asked Questions (FAQs)
A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the drain pin, and to use thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet, and ensure that the gate-source voltage is within the recommended range. Also, ensure that the drain-source voltage is within the recommended range during operation.
To prevent damage, handle the device by the body or the pins, avoid touching the die, and use an anti-static wrist strap or mat. Also, avoid exposing the device to extreme temperatures, humidity, or physical stress.
To troubleshoot issues, first check the PCB layout and ensure that it is correct. Then, check the biasing circuit and ensure that it is within the recommended range. Use a thermal camera to check for hotspots, and use a oscilloscope to check the device's operation.
ROHM Semiconductor follows the JEDEC and AEC-Q101 standards for reliability and quality. The device is also qualified according to the automotive industry's quality standards.
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BSM080D12P2C008 Overview
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