SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
120 A
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-XUFM-X8
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
780 W
Pulsed Drain Current-Max (IDM):
240 A
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
BSM120D12P2C005 Frequently Asked Questions (FAQs)
The maximum operating temperature range for the BSM120D12P2C005 is -40°C to 150°C.
To ensure reliability, it's essential to follow the recommended derating guidelines, ensure proper thermal management, and consider using a heat sink if necessary.
ROHM provides a recommended PCB layout and thermal design guide in their application notes. It's essential to follow these guidelines to ensure optimal performance and thermal management.
Yes, the BSM120D12P2C005 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, gate drive requirements, and thermal management.
The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. ROHM provides guidelines for selecting the optimal gate resistor value in their application notes.
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BSM120D12P2C005 Overview
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