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BSO033N03MSG - Infineon

Description: Infineon BSO033N03MSG N-channel MOSFET Transistor, 22 A, 30 V, 8-Pin DSO

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BSO033N03MSG - Infineon PCB footprint - SOT23 (8-Pin) - SOT23 (8-Pin) - SO-8
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BSO033N03MSG - Infineon  - 3D model - SOT23 (8-Pin) - SO-8
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BSO033N03MSG Details

  • Manufacturer Part Number:

    BSO033N03MSG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC PACKAGE-8

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSO033N03MSG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSO033N03MSG is -55°C to 175°C, as specified in the datasheet. However, it's essential to consider the derating curves for power dissipation and junction temperature to ensure reliable operation.
  • To ensure proper cooling, consider the thermal resistance (Rth) of the device, which is 2.5 K/W for the BSO033N03MSG. Use a heat sink with a sufficient thermal interface material, and ensure good airflow around the device. You can also use thermal simulation tools to optimize your design.
  • The recommended gate drive voltage for the BSO033N03MSG is between 4.5V and 15V, with a typical value of 10V. However, it's essential to consider the gate-source voltage (Vgs) threshold, which is typically around 3.5V, to ensure proper switching.
  • Yes, the BSO033N03MSG is suitable for high-frequency switching applications due to its low gate charge (Qg) of 13 nC and low output capacitance (Coss) of 220 pF. However, consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductances and capacitances.
  • To protect the BSO033N03MSG, use a suitable overvoltage protection (OVP) circuit, such as a zener diode or a dedicated OVP IC, to clamp the voltage below the maximum rated voltage (30V). Additionally, implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC to detect and respond to excessive current conditions.

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