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BSS123NH6433XTMA1 - Infineon

Description: MOSFET N-Ch 100V 190mA SOT-23-3

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PCB Footprints
BSS123NH6433XTMA1 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - BSS123NH6433XTMA1
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BSS123NH6433XTMA1 Details

  • Manufacturer Part Number:

    BSS123NH6433XTMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.19 A

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.1 pF

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSS123NH6433XTMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BSS123NH6433XTMA1 is a 3-pin SOT23 package with a pitch of 0.95 mm and a pad size of 1.3 mm x 1.3 mm.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the risk of overheating the device.
  • The maximum operating temperature range for the BSS123NH6433XTMA1 is -40°C to 150°C, with a junction temperature (Tj) of up to 150°C.
  • Store the BSS123NH6433XTMA1 in its original packaging or in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads during handling and shipping.
  • The BSS123NH6433XTMA1 has an ESD rating of HBM 2 kV and MM 200 V. Handle the device with ESD-protective equipment and follow proper ESD handling procedures to prevent damage.

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BSS123NH6433XTMA1 Overview

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Part Image BSS123NH6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET