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BSS127H6327 - Infineon

Description: Infineon,Trans BSS127H6327 Infineon BSS127H6327 N-channel MOSFET Transistor, 0.021 A, 600 V, 3-Pin SOT-23

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BSS127H6327 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23-ren1
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BSS127H6327 - Infineon  - 3D model - SOT23 (3-Pin) - SOT23-ren1
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BSS127H6327 Details

  • Manufacturer Part Number:

    BSS127H6327

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    0.021 A

  • Drain-source On Resistance-Max:

    600 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

BSS127H6327 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the BSS127H6327 in their application note AN2014-01. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • The BSS127H6327 requires a specific startup sequence to ensure proper biasing. Infineon recommends applying VCC before VBB, and ensuring that VCC is stable before applying VBB. A soft-start circuit can also be used to prevent inrush currents.
  • Although the datasheet specifies a maximum VBB voltage of 15V, Infineon recommends limiting it to 12V to ensure reliable operation and prevent damage to the device.
  • The BSS127H6327 has built-in OCP and OTP features. For OCP, the device will limit the current to a safe value. For OTP, the device will shut down if the junction temperature exceeds 150°C. You should design your system to detect and respond to these conditions, such as by resetting the device or alerting the user.
  • Infineon recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins of the BSS127H6327 to prevent damage from electrostatic discharge.

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BSS127H6327 Overview

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Part Image BSS127 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS127E6327 Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET