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BSS63 - onsemi

Description: Obsolete - High Voltage PNP Bipolar Transistor

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PCB Footprints
BSS63 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - BSS63aa
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BSS63 - onsemi  - 3D model - SOT23 (3-Pin) - BSS63aa
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BSS63 Details

  • Manufacturer Part Number:

    BSS63

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Manufacturer Package Code:

    318BM

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

BSS63 Frequently Asked Questions (FAQs)

  • The maximum SOA for the BSS63 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 1.5 A and 30 V.
  • To ensure linear operation, the BSS63 should be biased in the saturation region. This can be achieved by setting the base-emitter voltage (Vbe) to around 0.7 V and the collector-emitter voltage (Vce) to at least 1 V. The base current should be limited to prevent overheating.
  • To minimize thermal resistance, the BSS63 should be mounted on a PCB with a large copper area connected to the collector pin. The thermal via should be placed close to the transistor and connected to a large copper plane on the bottom layer. A thermal pad or heat sink can also be used to improve heat dissipation.
  • To protect the BSS63 from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays. The PCB should also be designed with ESD protection in mind, including the use of ESD-resistant components and a grounded metal enclosure.
  • The maximum power dissipation of the BSS63 is dependent on the ambient temperature and the thermal resistance of the device. According to the datasheet, the maximum power dissipation is 625 mW at 25°C. However, this value can be derated based on the operating temperature and thermal resistance.

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BSS63 Overview

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Part Image BSS63 NXP Semiconductors

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Part Image BSS63RTA Zetex / Diodes Inc

Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Part Image BSS63-T Nexperia

Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Part Image BSS63TRL NXP Semiconductors

Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Part Image BSS63TC Diodes Incorporated

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For a full list of alternate parts for BSS63, check out Findchips.com