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BSZ028N04LS - Infineon

Description: MOSFET TRENCH <= 40V

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PCB Footprints
BSZ028N04LS - Infineon PCB footprint - Other - Other - PG-TSDSON-8 FL_ 2022
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3D Models
BSZ028N04LS - Infineon  - 3D model - Other - PG-TSDSON-8 FL_ 2022
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BSZ028N04LS Details

  • Manufacturer Part Number:

    BSZ028N04LS

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ028N04LS Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for the BSZ028N04LS in their application note AN2013-03. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure proper biasing during startup, Infineon recommends using a soft-start circuit to slowly ramp up the gate voltage. This can be achieved using an external resistor-capacitor network or an integrated soft-start circuit in the driver IC.
  • Although not explicitly stated in the datasheet, Infineon recommends limiting voltage overshoots to 10% of the maximum rated voltage (VDS) to prevent damage to the device. This can be achieved using snubber circuits or active voltage clamping.
  • While the BSZ028N04LS is suitable for high-frequency switching, its performance may degrade above 100 kHz due to increased switching losses. Infineon recommends using their OptiMOS 5 or CoolMOS C7 series for high-frequency applications above 200 kHz.
  • The BSZ028N04LS has an integrated ESD protection diode, but additional external protection may be necessary depending on the application. Infineon recommends following the IEC 61000-4-2 standard for ESD protection and using TVS diodes or other protection devices as needed.

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