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BSZ028N04LSATMA1 - Infineon

Description: MOSFET N-CH 40V 21A/40A TSDSON

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BSZ028N04LSATMA1 Details

  • Manufacturer Part Number:

    BSZ028N04LSATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ028N04LSATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSZ028N04LSATMA1 is 150°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
  • The maximum current rating of the BSZ028N04LSATMA1 is 28A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the application's specific requirements.
  • To protect the BSZ028N04LSATMA1 from overvoltage and overcurrent, consider using a voltage regulator or a surge protector, and implement overcurrent protection using a fuse or a current-sensing resistor.
  • The recommended gate drive voltage for the BSZ028N04LSATMA1 is between 4.5V and 10V, as specified in the datasheet. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

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BSZ028N04LSATMA1 Overview

Use the download button to access the BSZ028N04LSATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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