Part Image

BSZ0500NSIATMA1 - Infineon

Description: OptiMOS OptiMOS 5Power-MOSFET,30V BSZ0500NSI

Download BSZ0500NSIATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSZ0500NSIATMA1 - Infineon PCB footprint - Other - Other - BSZ0500NSIATMA1-1
click to zoom
3D Models
BSZ0500NSIATMA1 - Infineon  - 3D model - Other - BSZ0500NSIATMA1-1
click to zoom

BSZ0500NSIATMA1 Details

  • Manufacturer Part Number:

    BSZ0500NSIATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0500NSIATMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure that the device is operated within the specified junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature.
  • A gate drive circuit with a high current capability (e.g., 1A to 2A) and a fast rise time (e.g., <10ns) is recommended. A dedicated gate driver IC or a discrete transistor-based design can be used.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. A fuse or a current-sensing resistor can be used for OCP.
  • A dead time of 100ns to 200ns is recommended to prevent shoot-through currents and ensure reliable operation. The exact dead time may vary depending on the specific application and switching frequency.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSZ0500NSIATMA1 Overview

Use the download button to access the BSZ0500NSIATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSZ05, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSZ0500NSIATMA1

Showing 0 results