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BSZ0501NSIATMA1 - Infineon

Description: MOSFET LV POWER MOS

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PCB Footprints
BSZ0501NSIATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8_2019
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3D Models
BSZ0501NSIATMA1 - Infineon  - 3D model - Other - PG-TSDSON-8_2019
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BSZ0501NSIATMA1 Details

  • Manufacturer Part Number:

    BSZ0501NSIATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0501NSIATMA1 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device near a thermal pad or a heat sink, and ensuring good thermal conductivity between the device and the heat sink. The datasheet provides some guidelines, but it's recommended to consult Infineon's application notes and thermal design guides for more detailed information.
  • To ensure EMC, follow the guidelines in the datasheet and application notes for proper PCB layout, decoupling, and filtering. Additionally, consider using shielding, grounding, and filtering components to minimize electromagnetic interference (EMI). Consult Infineon's EMC guidelines and relevant industry standards for more information.
  • The reliability and lifetime of the BSZ0501NSIATMA1 are dependent on various factors, including operating conditions, temperature, and usage patterns. Consult Infineon's reliability reports and application notes for more information on the device's expected lifetime and reliability under different operating conditions.
  • The BSZ0501NSIATMA1 is rated for operation up to 150°C. However, the device's performance and reliability may degrade at high temperatures. Consult the datasheet and application notes for more information on the device's thermal characteristics and recommended operating conditions.
  • To troubleshoot issues with the BSZ0501NSIATMA1, start by consulting the datasheet and application notes for common pitfalls and troubleshooting guidelines. Use oscilloscopes, logic analyzers, and other diagnostic tools to identify the root cause of the issue. If necessary, contact Infineon's technical support for further assistance.

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BSZ0501NSIATMA1 Overview

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