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BSZ0502NSIATMA1 - Infineon

Description: N-Channel MOSFET VDS= 30V, RDS(on),max= 2.8mΩ, ID= 100A, QOSS= 13.5nC, Package PG-TSDSON-8 FL.

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BSZ0502NSIATMA1 Details

  • Manufacturer Part Number:

    BSZ0502NSIATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0502NSIATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the specified temperature range to maintain reliability and performance.
  • The BSZ0502NSIATMA1 is rated for a maximum voltage of 50V. While it can be used in high-voltage applications, it's essential to ensure that the device is properly protected against overvoltage and surge events using suitable protection circuits and components.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, gate drive voltage, and device characteristics. A general guideline is to use a gate resistor value between 10Ω and 100Ω. However, it's recommended to consult the application note AN2013-03 or contact Infineon's technical support for more specific guidance.

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