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BSZ0503NSIATMA1 - Infineon

Description: MOSFET TRENCH <= 40V

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BSZ0503NSIATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ0503NSIATMA1 - Infineon PCB footprint - Other - Other - BSZ0500NSIATMA1-1
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BSZ0503NSIATMA1 - Infineon - 3D model - Other - BSZ0500NSIATMA1-1
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BSZ0503NSIATMA1 Details

  • Manufacturer Part Number:

    BSZ0503NSIATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0503NSIATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in the application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. Infineon provides a gate resistor calculation tool and guidelines in the application note AN2013-03 to help with the selection process.
  • The maximum allowed junction temperature for the BSZ0503NSIATMA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Yes, the BSZ0503NSIATMA1 is qualified according to AEC-Q101, which makes it suitable for automotive and high-reliability applications. However, it's essential to follow the recommended design and testing guidelines to ensure the device meets the specific application requirements.
  • Infineon provides guidelines for EMC design in the application note AN2013-03, which includes recommendations for PCB layout, component selection, and shielding to minimize electromagnetic interference.

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BSZ0503NSIATMA1 Overview

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