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BSZ050N03LSGATMA1 - Infineon

Description: N-Channel 30 V 16A (Ta), 40A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8

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BSZ050N03LSGATMA1 Details

  • Manufacturer Part Number:

    BSZ050N03LSGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    70 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ050N03LSGATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BSZ050N03LSGATMA1 is a 3.3mm x 3.3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source pins to filter out noise. The datasheet provides more detailed guidelines.
  • The maximum allowed power dissipation for the BSZ050N03LSGATMA1 is 1.5 W. However, this value can be derated based on the ambient temperature and PCB design. Consult the datasheet for thermal resistance and power dissipation calculations.
  • Yes, the BSZ050N03LSGATMA1 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the PCB design and layout minimize parasitic inductance and capacitance to prevent ringing and oscillations.
  • To protect the BSZ050N03LSGATMA1 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, and follow proper handling and storage procedures.

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BSZ050N03LSGATMA1 Overview

Use the download button to access the BSZ050N03LSGATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image BSZ050N03LSG Infineon Technologies AG

Power Field-Effect Transistor, 40A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET