Please enter a minimum 3 letters or numbers
Technical Content
Part Image

BSZ060NE2LS - Infineon

Description: MOSFET N-Ch 12A 25V OptiMOS TSDSON8EP Infineon BSZ060NE2LS N-channel MOSFET Transistor, 40 A, 25 V, 8-Pin TSDSON

Download BSZ060NE2LS Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
BSZ060NE2LS - Infineon - PCB symbol
click to zoom
PCB Footprints
BSZ060NE2LS - Infineon PCB footprint - Other - Other - PG-TSDSON-8_1_1.1
click to zoom
3D Models
BSZ060NE2LS - Infineon - 3D model - Other - PG-TSDSON-8_1_1.1
click to zoom

BSZ060NE2LS Details

  • Manufacturer Part Number:

    BSZ060NE2LS

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    16 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0081 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ060NE2LS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to filter out noise and ensure a stable voltage supply.
  • The maximum allowed power dissipation for the BSZ060NE2LS is 2.5W. Exceeding this limit can cause the device to overheat and reduce its lifespan.
  • The device is sensitive to ESD. Handling the device by its pins or body can cause damage. Use an anti-static wrist strap, mat, or packaging to prevent ESD damage.
  • The recommended storage temperature range for the BSZ060NE2LS is -40°C to 125°C. Storing the device outside this range can affect its performance and lifespan.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSZ060NE2LS Overview

Use the download button to access the BSZ060NE2LS schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSZ06, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSZ060NE2LS

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑