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BSZ060NE2LSATMA1 - Infineon

Description: N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

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BSZ060NE2LSATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ060NE2LSATMA1 - Infineon PCB footprint - Other - Other - BSZ060NE2LSATMA1-2
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BSZ060NE2LSATMA1 - Infineon - 3D model - Other - BSZ060NE2LSATMA1-2
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BSZ060NE2LSATMA1 Details

  • Manufacturer Part Number:

    BSZ060NE2LSATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    16 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0081 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ060NE2LSATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the BSZ060NE2LSATMA1 is a 6-pin SOT-23 package with a 1.8mm x 1.35mm body size. The recommended land pattern is available in the Infineon application note AN2013-01.
  • To ensure proper biasing, the BSZ060NE2LSATMA1 requires a supply voltage (VCC) between 1.71V and 5.5V, and a gate-source voltage (VGS) between -0.5V and VCC + 0.5V. Additionally, a 10nF decoupling capacitor should be placed close to the device to filter out noise.
  • The BSZ060NE2LSATMA1 is rated for operation from -40°C to 150°C (TJ). However, the device's performance may degrade at temperatures above 125°C, and it is recommended to derate the device's power handling accordingly.
  • To protect the BSZ060NE2LSATMA1 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
  • The BSZ060NE2LSATMA1 has a maximum continuous drain current (ID) of 2.5A, and a maximum pulsed drain current (IDP) of 5A. However, the device's current rating may be limited by the PCB's thermal design and the device's junction temperature.

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BSZ060NE2LSATMA1 Overview

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