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BSZ063N04LS6ATMA1 - Infineon

Description: MOSFET 40V Mosfet 6,3mOhm, S3O8MOSFET, Power MOSFET

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BSZ063N04LS6ATMA1 - Infineon - PCB symbol
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BSZ063N04LS6ATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8 fused_1
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BSZ063N04LS6ATMA1 - Infineon - 3D model - Other - PG-TSDSON-8 fused_1
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BSZ063N04LS6ATMA1 Details

  • Manufacturer Part Number:

    BSZ063N04LS6ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ063N04LS6ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ063N04LS6ATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the driver IC. Avoid using vias under the MOSFET, and use a solid ground plane.
  • Use a voltage clamp or a zener diode to protect against overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended gate resistor value depends on the specific application, but a typical value is in the range of 10-100 ohms. A lower value can reduce switching losses, but may increase oscillations.

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BSZ063N04LS6ATMA1 Overview

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