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BSZ065N03LS - Infineon

Description: Infineon BSZ065N03LS N-channel MOSFET Transistor, 40 A, 30 V, 8-Pin TDSON

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BSZ065N03LS - Infineon PCB footprint - Other - Other - PG-TSDSON-8FL (S3O8)
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BSZ065N03LS - Infineon  - 3D model - Other - PG-TSDSON-8FL (S3O8)
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BSZ065N03LS Details

  • Manufacturer Part Number:

    BSZ065N03LS

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    16 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0086 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ065N03LS Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ065N03LS is -40°C to 150°C.
  • To ensure stability, it is recommended to use a low-ESR ceramic capacitor (e.g., 1 μF) between the VIN and GND pins, and to keep the PCB layout as compact as possible to minimize parasitic inductances.
  • The recommended gate resistor value is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
  • Yes, the BSZ065N03LS is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • It is recommended to use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions, and to implement a suitable protection circuit to prevent damage to the device.

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Part Image BSZ065N03LSATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET