Part Image

BSZ067N06LS3GATMA1 - Infineon

Description: MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3

Download BSZ067N06LS3GATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSZ067N06LS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8_1
click to zoom

BSZ067N06LS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ067N06LS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    118 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    59 A

  • Drain-source On Resistance-Max:

    0.0121 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    32 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    316 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ067N06LS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ067N06LS3GATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the decoupling capacitors. Avoid using vias under the MOSFET, and use a solid ground plane.
  • Use a TVS diode or a zener diode to clamp overvoltages, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • The recommended gate resistor value depends on the specific application, but a typical value is in the range of 10-100 ohms.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSZ067N06LS3GATMA1 Overview

Use the download button to access the BSZ067N06LS3GATMA1 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like BSZ06, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSZ067N06LS3GATMA1

Showing 0 results