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BSZ075N08NS5ATMA1 - Infineon

Description: MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 5Power-Transistor,80V

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BSZ075N08NS5ATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ075N08NS5ATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8-26
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BSZ075N08NS5ATMA1 - Infineon - 3D model - Other - PG-TSDSON-8-26
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BSZ075N08NS5ATMA1 Details

  • Manufacturer Part Number:

    BSZ075N08NS5ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    104 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ075N08NS5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ075N08NS5ATMA1 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the specified maximum rating of 80V.
  • A good PCB layout should ensure minimal inductance and resistance in the drain and source connections. Thermal management is critical; use a heat sink or thermal pad to maintain a junction temperature below 175°C.
  • Handle the device by the body or use an ESD wrist strap to prevent static electricity damage. Ensure the PCB has ESD protection components, such as TVS diodes or ESD arrays, to protect the MOSFET.
  • The recommended gate resistor value is typically between 10Ω and 100Ω, depending on the specific application and switching frequency.

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BSZ075N08NS5ATMA1 Overview

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