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BSZ0901NS - Infineon

Description: MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

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Symbol
BSZ0901NS - Infineon - PCB symbol
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PCB Footprints
BSZ0901NS - Infineon PCB footprint - Other - Other - PG-TSDSON-8-26
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3D Models
BSZ0901NS - Infineon - 3D model - Other - PG-TSDSON-8-26
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BSZ0901NS Details

  • Manufacturer Part Number:

    BSZ0901NS

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.0026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0901NS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • The BSZ0901NS requires a stable voltage supply and a proper biasing circuit. Ensure the input voltage is within the recommended range (12V to 15V) and use a suitable bias resistor (e.g., 1 kΩ to 4.7 kΩ) to set the desired output current.
  • The maximum allowed power dissipation for the BSZ0901NS is 1.5 W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range (−40°C to 150°C) to prevent overheating.
  • Yes, the BSZ0901NS is suitable for high-frequency switching applications up to 100 kHz. However, ensure the device is properly bypassed with a capacitor (e.g., 100 nF) to minimize electromagnetic interference (EMI).
  • Handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind (e.g., add ESD diodes or resistors to the input pins).

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BSZ0901NS Overview

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BSZ0901NS Alternates

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Part Image BSZ0901NSATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET