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BSZ0901NSIATMA1 - Infineon

Description: Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R - Tape and Reel

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BSZ0901NSIATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ0901NSIATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8 FL_ 2022
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3D Models
BSZ0901NSIATMA1 - Infineon - 3D model - Other - PG-TSDSON-8 FL_ 2022
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BSZ0901NSIATMA1 Details

  • Manufacturer Part Number:

    BSZ0901NSIATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0901NSIATMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to filter out noise and ensure a stable voltage supply.
  • The BSZ0901NSIATMA1 has an operating temperature range of -40°C to 150°C. However, the device's performance may degrade at extreme temperatures, and it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance.
  • The device is sensitive to ESD, and proper handling and storage procedures should be followed to prevent damage. Use an anti-static wrist strap, mat, or packaging materials to prevent ESD damage.
  • A soldering profile with a peak temperature of 260°C and a dwell time of 30-60 seconds is recommended. The device should be soldered using a reflow soldering process with a nitrogen atmosphere to prevent oxidation.

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BSZ0901NSIATMA1 Overview

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Part Image BSZ0901NSI Infineon Technologies AG

Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET