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BSZ0909NS - Infineon

Description: MOSFETs N-Ch 30V 36A TDSON-8 OptiMOS

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Symbol
BSZ0909NS - Infineon - PCB symbol
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PCB Footprints
BSZ0909NS - Infineon PCB footprint - Other - Other - PG-TSDSON-8
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3D Models
BSZ0909NS - Infineon - 3D model - Other - PG-TSDSON-8
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BSZ0909NS Details

  • Manufacturer Part Number:

    BSZ0909NS

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    9 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    34 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    144 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ0909NS Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to set the desired bias point.
  • Monitor the device's junction temperature (Tj), case temperature (Tc), and power dissipation (Pd) to prevent overheating. Ensure that the device is operated within the recommended temperature range and power dissipation limits.
  • Use ESD protection devices such as TVS diodes or ESD arrays at the input and output pins. Ensure that the PCB design includes ESD protection circuits and follow proper handling and storage procedures to prevent ESD damage.
  • Use a reflow soldering process with a peak temperature of 260°C. Ensure that the device is handled and stored in a moisture-controlled environment to prevent moisture-related issues.

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BSZ0909NS Overview

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BSZ0909NS Alternates

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Part Image BSZ0909NSATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 36A I(D), 34V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET