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BSZ097N10NS5ATMA1 - Infineon

Description: Trans MOSFET N-CH 100V 11A Automotive 8-Pin TSDSON EP T/R

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BSZ097N10NS5ATMA1 - Infineon - PCB symbol
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PCB Footprints
BSZ097N10NS5ATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-U03
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BSZ097N10NS5ATMA1 - Infineon - 3D model - Other - PG-TDSON-8-U03
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BSZ097N10NS5ATMA1 Details

  • Manufacturer Part Number:

    BSZ097N10NS5ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    82 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0097 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ097N10NS5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSZ097N10NS5ATMA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The maximum current rating of the BSZ097N10NS5ATMA1 is 97 A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the BSZ097N10NS5ATMA1 from overvoltage and overcurrent, a suitable voltage regulator and current limiter should be used. Additionally, a fuse or a current-sensing resistor can be used to detect overcurrent conditions.
  • The recommended gate drive voltage for the BSZ097N10NS5ATMA1 is between 10 V and 15 V, as specified in the datasheet. A higher gate drive voltage can reduce the device's on-state resistance, but may also increase the risk of gate oxide damage.

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BSZ097N10NS5ATMA1 Overview

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