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BSZ110N06NS3GATMA1 - Infineon

Description: BSZ110N06NS3GATMA1 N-Channel MOSFET, 20 A, 60 V OptiMOS 3, 8-Pin TSDSON Infineon

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BSZ110N06NS3GATMA1 - Infineon PCB footprint - Other - Other - Infineon PG-TSDSON-8
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BSZ110N06NS3GATMA1 - Infineon  - 3D model - Other - Infineon PG-TSDSON-8
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BSZ110N06NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ110N06NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ110N06NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ110N06NS3GATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections close together, and use a solid ground plane to reduce inductance.
  • Yes, the BSZ110N06NS3GATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and consider the device's switching characteristics, such as rise and fall times.
  • Use a suitable overvoltage protection (OVP) circuit, such as a zener diode or a dedicated OVP IC, and consider adding overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC.

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BSZ110N06NS3GATMA1 Overview

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