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BSZ150N10LS3G - Infineon

Description: N-Channel 100 V 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8

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BSZ150N10LS3G - Infineon - PCB symbol
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BSZ150N10LS3G - Infineon PCB footprint - Other - Other - BSZ150N10LS3G-2
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BSZ150N10LS3G - Infineon - 3D model - Other - BSZ150N10LS3G-2
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BSZ150N10LS3G Details

  • Manufacturer Part Number:

    BSZ150N10LS3G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ150N10LS3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ150N10LS3G is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (VGS) of at least 10V, and a gate current (IG) that is sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching times, but may increase power losses.
  • Yes, the BSZ150N10LS3G is suitable for high-frequency switching applications up to 1 MHz, but be aware of the increased power losses and potential for electromagnetic interference (EMI).
  • Use a suitable voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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BSZ150N10LS3G Overview

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