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BSZ240N12NS3G - Infineon

Description: MOSFET N-Ch 120V 37A TSDSON-8 OptiMOS 3

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BSZ240N12NS3G - Infineon PCB footprint - Other - Other - PG-TSDSON-8
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BSZ240N12NS3G - Infineon  - 3D model - Other - PG-TSDSON-8
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BSZ240N12NS3G Details

  • Manufacturer Part Number:

    BSZ240N12NS3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    66 W

  • Pulsed Drain Current-Max (IDM):

    148 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ240N12NS3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ240N12NS3G is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250 W for the BSZ240N12NS3G. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • The recommended gate drive voltage for the BSZ240N12NS3G is between 10 V and 15 V, with a maximum gate drive voltage of 20 V. Using a gate drive voltage within this range ensures proper switching performance and minimizes the risk of device damage.
  • Yes, the BSZ240N12NS3G can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current distribution and potential device damage.
  • To ensure optimal performance and minimize electromagnetic interference (EMI), it's recommended to follow good PCB design practices, such as using a multi-layer PCB, keeping the power loops small, and using a solid ground plane. Additionally, ensure that the device is placed close to the heat sink and that the thermal interface material (TIM) is properly applied.

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BSZ240N12NS3G Overview

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Part Image BSZ240N12NS3GATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET