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BSZ42DN25NS3GATMA1 - Infineon

Description: BSZ42DN25NS3GATMA1 N-Channel MOSFET, 5 A, 250 V OptiMOS 3, 8-Pin TSDSON Infineon

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BSZ42DN25NS3GATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8_1
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BSZ42DN25NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ42DN25NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.425 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ42DN25NS3GATMA1 Frequently Asked Questions (FAQs)

  • The BSZ42DN25NS3GATMA1 can operate safely between -40°C to 150°C, but the optimal operating temperature range is between 25°C to 125°C for maximum performance and reliability.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device should be placed near the power source, and the PCB should have a low inductance path for the high-frequency signals.
  • To minimize EMI, use a shielded enclosure, and ensure the PCB has a good ground plane. Additionally, use a common-mode choke or a ferrite bead to filter out high-frequency noise on the power lines.
  • A gate drive circuit with a high current capability (e.g., 1A) and a fast rise time (e.g., 10ns) is recommended. The gate drive voltage should be between 10V to 15V, and the gate resistance should be less than 10 ohms.

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BSZ42DN25NS3GATMA1 Overview

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Part Image BSZ42DN25NS3G Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET