Part Image

BSZ440N10NS3GATMA1 - Infineon

Description: OptiMOSª 3 Power-Transistor,100V

Download BSZ440N10NS3GATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BSZ440N10NS3GATMA1 - Infineon PCB footprint - Other - Other - BSZ440N10NS3GATMA1-1
click to zoom
3D Models
BSZ440N10NS3GATMA1 - Infineon  - 3D model - Other - BSZ440N10NS3GATMA1-1
click to zoom

BSZ440N10NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ440N10NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    17 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    0.044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ440N10NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ440N10NS3GATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1.5 K/W or lower, and applying a thermal interface material with a thermal conductivity of 5 W/mK or higher.
  • The recommended gate resistor value for the BSZ440N10NS3GATMA1 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
  • Yes, the BSZ440N10NS3GATMA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the gate drive circuitry is designed to minimize ringing and overshoot.
  • To protect the BSZ440N10NS3GATMA1 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package or bag.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BSZ440N10NS3GATMA1 Overview

Use the download button to access the BSZ440N10NS3GATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BSZ44, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BSZ440N10NS3GATMA1

Showing 0 results